Comparative analysis of the Performances and reliability of a Switching Power Amplifier (SPA) for Active Magnetic Bearing Systems: SiC MOSFET Vs Si IGBT Version

This paper explores the potential advantages of using wide bandgap (WBG) semiconductors, specifically Silicon-Carbide (SiC), over traditional Silicon (Si) in power electronic systems. The authors present a comprehensive comparison between the SiC MOSFET switching power amplifier (SPA) and the Si IGBT SPA, assessing their efficiency, weight, and footprint, as well as the behavior of the SiC SPA in presence of long power cables. Additionally, the durability and reliability of the SiC SPA are analyzed through environmental aging tests such as thermal cycling, vibration, shock tests, and EMC tests. The results show that the SiC SPA is a promising technology with significant advantages over traditional Si SPAs, such as reduced losses, increased efficiency, and decreased weight. However, further qualification tests are needed to ensure its reliability and durability under more demanding conditions. The SiC SPA has the potential to become a valuable solution for a wide range of applications, including oil and gas platforms and sub-marine applications.