Centrifuge for Epitaxial Growth of Semiconductor Multilayers
We describe a vacuum centrifuge which consists of along vertical rotor that is at its upper end electromagnetically suspended inside a vacuum tank. The design is arrdnged such that it fulfills the requirement for d thoroughly clean vacuum recipient. Experiments are discussed which illustrate the application of the centrifuge to liquid phase epitaxy of silicon multi 1 ayers.
Author: E. Bauser and G. Schweitzer and H.P. Strunk and A. Traxler | Published: 1988
Booktitle: Proceedings of ISMB1 - Courtesy of Springer-Verlag
Booktitle: Proceedings of ISMB1 - Courtesy of Springer-Verlag